Physics-based MCT circuit model using the lumped-charge modeling approach.
This paper presents a physics-based model of metal-oxide-semiconductor (MOS) controlled thyristor (MCT) using the lumped-charge modeling technique. As a relatively new power semiconductor device, little effort has been made thus far in creating an accurate model for simulation use. The only MCT mode...
| 發表在: | IEEE Transactions on power electronics 16, 2 (2001). |
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| 格式: | Article |
| 語言: | 英语 |
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