Physics-based MCT circuit model using the lumped-charge modeling approach.

Physics-based MCT circuit model using the lumped-charge modeling approach.

This paper presents a physics-based model of metal-oxide-semiconductor (MOS) controlled thyristor (MCT) using the lumped-charge modeling technique. As a relatively new power semiconductor device, little effort has been made thus far in creating an accurate model for simulation use. The only MCT mode...

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Xuất bản năm:IEEE Transactions on power electronics 16, 2 (2001).
Tác giả chính: Hossain, Z.
Định dạng: Bài viết
Ngôn ngữ:English
Những chủ đề:
SPICE-based simulators.
Saber simulation.
Behavioral subcircuit model.
Bipolar transistors.
Dynamic behavior prediction.
Dynamic soft-switching behavior.
Hybrid bipolar-MOS power.
Internal physical processes.
Lumped-charge modeling.
Lumped-charge modeling approach.
Lumped-charge modeling technique.
Metal-oxide-semiconductor controlled thyristor.
One-dimensional model.
Physics-based MCT circuit model.
Power semiconductor device.
Static operation.
Structural geometry.
Zero voltage switching.