Azala

Physics-based MCT circuit model using the lumped-charge modeling approach.

This paper presents a physics-based model of metal-oxide-semiconductor (MOS) controlled thyristor (MCT) using the lumped-charge modeling technique. As a relatively new power semiconductor device, little effort has been made thus far in creating an accurate model for simulation use. The only MCT mode...

Deskribapen osoa

Xehetasun bibliografikoak
Argitaratua izan da:IEEE Transactions on power electronics 16, 2 (2001).
Egile nagusia: Hossain, Z.
Formatua: Artikulua
Hizkuntza:ingelesa
Gaiak:
SPICE-based simulators.
Saber simulation.
Behavioral subcircuit model.
Bipolar transistors.
Dynamic behavior prediction.
Dynamic soft-switching behavior.
Hybrid bipolar-MOS power.
Internal physical processes.
Lumped-charge modeling.
Lumped-charge modeling approach.
Lumped-charge modeling technique.
Metal-oxide-semiconductor controlled thyristor.
One-dimensional model.
Physics-based MCT circuit model.
Power semiconductor device.
Static operation.
Structural geometry.
Zero voltage switching.