Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N

The electrical properties of Si-doped n+-In0.23Ga0.77N/GaN SPS structure were investigated and compared with conventional Mg-doped GaN contact layer. Temperature dependent Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduc...

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Detalles Bibliográficos

Publicado en:	IEEE Transactions on electron devices 50, 2 (2003).
Autor Principal:	Kuo, C.H
Formato:	Artigo
Idioma:	English
Subjects:	10 ohm. 2.94 V. 20 mA. LED forward voltage. SPS. Lifetime. Light emitting diodes. Series resistance. Sheet electron concentration. Short period superlattice. Temperature dependent Hall measurement. Tunneling contact layer. In0.23Ga0.77N:Si-GaN. In0.23Ga0.77N:Si/GaN.