Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N
The electrical properties of Si-doped n+-In0.23Ga0.77N/GaN SPS structure were investigated and compared with conventional Mg-doped GaN contact layer. Temperature dependent Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduc...
| הוצא לאור ב: | IEEE Transactions on electron devices 50, 2 (2003). |
|---|---|
| מחבר ראשי: | |
| פורמט: | Article |
| שפה: | English |
| נושאים: |