Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N

Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N

The electrical properties of Si-doped n+-In0.23Ga0.77N/GaN SPS structure were investigated and compared with conventional Mg-doped GaN contact layer. Temperature dependent Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduc...

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Xehetasun bibliografikoak
Argitaratua izan da:IEEE Transactions on electron devices 50, 2 (2003).
Egile nagusia: Kuo, C.H
Formatua: Artikulua
Hizkuntza:English
Gaiak:
10 ohm.
2.94 V.
20 mA.
LED forward voltage.
SPS.
Lifetime.
Light emitting diodes.
Series resistance.
Sheet electron concentration.
Short period superlattice.
Temperature dependent Hall measurement.
Tunneling contact layer.
In0.23Ga0.77N:Si-GaN.
In0.23Ga0.77N:Si/GaN.