An analysis of small-signal gate-drain resistance effect on RF power MOSFETs.

An analysis of small-signal gate-drain resistance effect on RF power MOSFETs.

The anomalous dip in scattering parameter S11 of RF power MOSFETs with drain-to-spacer offset is explained quantitatively for the first time. Our results show that, for RF power MOSFETs, the input impedance can be represented by a simple series RC circuit at low frequencies and a "shifted"...

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Bibliographic Details
Published in:IEEE Transactions on electron devices 50, 2 (2003).
Main Author: Yo-Sheng Lin
Format: Article
Language:English
Subjects:
RF power MOSFET.
Smith chart.
Anomalous dip.
Drain-to-spacer offset.
Input impedance.
Parallel RC circuit.
Poles and zeros.
Scattering parameter.
Series RC circuit.
Small-signal gate-drain resistance.