An analysis of small-signal gate-drain resistance effect on RF power MOSFETs.
The anomalous dip in scattering parameter S11 of RF power MOSFETs with drain-to-spacer offset is explained quantitatively for the first time. Our results show that, for RF power MOSFETs, the input impedance can be represented by a simple series RC circuit at low frequencies and a "shifted"...
| I publikationen: | IEEE Transactions on electron devices 50, 2 (2003). |
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| Huvudupphovsman: | |
| Materialtyp: | Artikel |
| Språk: | English |
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