A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications.
A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications has been demonstrated and studied. A simple model is proposed to analyze its important parameters such as the voltage-dependent bulk sheet resistance, interface resistance, and voltage coefficient...
| الحاوية / القاعدة: | IEEE Transactions on electron devices 50, 2 (2003). |
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| المؤلف الرئيسي: | |
| التنسيق: | مقال |
| اللغة: | English |
| الموضوعات: |