A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications.

A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications.

A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications has been demonstrated and studied. A simple model is proposed to analyze its important parameters such as the voltage-dependent bulk sheet resistance, interface resistance, and voltage coefficient...

Täydet tiedot

Bibliografiset tiedot
Julkaisussa:IEEE Transactions on electron devices 50, 2 (2003).
Päätekijä: Kong-Beng Thei
Aineistotyyppi: Artikkeli
Kieli:English
Aiheet:
Si.
VCR value reduction.
Anomalous voltage-dependent characteristic.
Interface resistance.
Model.
Polysilicon resistor.
Subquarter micron CMOS device applications.
Voltage coefficient of resistance.
Voltage-dependent bulk sheet resistance.