A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications.

A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications has been demonstrated and studied. A simple model is proposed to analyze its important parameters such as the voltage-dependent bulk sheet resistance, interface resistance, and voltage coefficient...

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Bibliographic Details

Published in:	IEEE Transactions on electron devices 50, 2 (2003).
Main Author:	Kong-Beng Thei
Format:	Article
Language:	English
Subjects:	Si. VCR value reduction. Anomalous voltage-dependent characteristic. Interface resistance. Model. Polysilicon resistor. Subquarter micron CMOS device applications. Voltage coefficient of resistance. Voltage-dependent bulk sheet resistance.