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A low-cost uncooled infrared microbolometer detector in standard CMOS technology.

This paper reports the development of a low-cost uncooled infrared microbolometer detector using a commercial 0.8 μm CMOS process, where the CMOS n-well layer is used as the infrared sensitive material. The n-well is suspended by front-end bulk-micromachining of the fabricated CMOS dies using electr...

詳細記述

書誌詳細
出版年:IEEE Transactions on electron devices 50, 2 (2003).
第一著者: Tezcan, D.S
フォーマット: 論文
言語:英語
主題:
0.5 Hz.
0.8 micron.
21 ms.
4 kHz.
74 micron.
80 micron.
CMOS n-well layer IR sensitive material.
FPA.
IR microbolometer detector.
Si.
TMAH.
Built-in diodes.
Commercial CMOS process.
Electrochemical etch-stop technique.
Focal plane array.
Front-end bulk-micromachining.
Low noise readout circuits.
Low-cost uncooled IR detector arrays.
N-well suspension.
Pixel distributed thermal model.
Standard CMOS technology.
Support arm polysilicon interconnects.
Uncooled infrared detector arrays.