A low-cost uncooled infrared microbolometer detector in standard CMOS technology.

This paper reports the development of a low-cost uncooled infrared microbolometer detector using a commercial 0.8 μm CMOS process, where the CMOS n-well layer is used as the infrared sensitive material. The n-well is suspended by front-end bulk-micromachining of the fabricated CMOS dies using electr...

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Bibliographic Details
Published in:	IEEE Transactions on electron devices 50, 2 (2003).
Main Author:	Tezcan, D.S
Format:	Article
Language:	English
Subjects:	0.5 Hz. 0.8 micron. 21 ms. 4 kHz. 74 micron. 80 micron. CMOS n-well layer IR sensitive material. FPA. IR microbolometer detector. Si. TMAH. Built-in diodes. Commercial CMOS process. Electrochemical etch-stop technique. Focal plane array. Front-end bulk-micromachining. Low noise readout circuits. Low-cost uncooled IR detector arrays. N-well suspension. Pixel distributed thermal model. Standard CMOS technology. Support arm polysilicon interconnects. Uncooled infrared detector arrays.