Impact ionization measurements and modeling for power PHEMT.

Impact ionization measurements and modeling for power PHEMT.

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A systematic study of impact ionization in pseudomorphic high electron mobility transistors (PHEMTs) has been carried out using temperature-dependent electrical measurements as well as modeling for optimizing the power performance of the devices through the best layout parameters. A measurement proc...

Täydet tiedot

Bibliografiset tiedot
Julkaisussa:IEEE Transactions on electron devices 50, 2 (2003).
Päätekijä: Baksht, T.
Aineistotyyppi: Artikkeli
Kieli:English
Aiheet:
High breakdown voltages.
High electron mobility transistors.
High output power.
Impact ionization current.
Impact ionization measurements.
Impact ionization modeling.
Layout parameters.
Mapping measurement technique.
Optimal gate-to-drain distance.
Optimum lateral layout.
Optimum vertical structure.
Power PHEMT.
Power performance optimization.
Pseudomorphic HEMTs.
Safe transistor operation region.
Statistical approach.
Temperature-dependent electrical measurements.