Impact ionization measurements and modeling for power PHEMT.

A systematic study of impact ionization in pseudomorphic high electron mobility transistors (PHEMTs) has been carried out using temperature-dependent electrical measurements as well as modeling for optimizing the power performance of the devices through the best layout parameters. A measurement proc...

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Detaylı Bibliyografya
Yayımlandı:IEEE Transactions on electron devices 50, 2 (2003).
Yazar: Baksht, T.
Materyal Türü: Makale
Dil:English
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