Impact ionization measurements and modeling for power PHEMT.
A systematic study of impact ionization in pseudomorphic high electron mobility transistors (PHEMTs) has been carried out using temperature-dependent electrical measurements as well as modeling for optimizing the power performance of the devices through the best layout parameters. A measurement proc...
Yayımlandı: | IEEE Transactions on electron devices 50, 2 (2003). |
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Materyal Türü: | Makale |
Dil: | English |
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