Impact ionization measurements and modeling for power PHEMT.

A systematic study of impact ionization in pseudomorphic high electron mobility transistors (PHEMTs) has been carried out using temperature-dependent electrical measurements as well as modeling for optimizing the power performance of the devices through the best layout parameters. A measurement proc...

সম্পূর্ণ বিবরণ

গ্রন্থ-পঞ্জীর বিবরন
প্রকাশিত:	IEEE Transactions on electron devices 50, 2 (2003).
প্রধান লেখক:	Baksht, T.
বিন্যাস:	প্রবন্ধ
ভাষা:	English
বিষয়গুলি:	High breakdown voltages. High electron mobility transistors. High output power. Impact ionization current. Impact ionization measurements. Impact ionization modeling. Layout parameters. Mapping measurement technique. Optimal gate-to-drain distance. Optimum lateral layout. Optimum vertical structure. Power PHEMT. Power performance optimization. Pseudomorphic HEMTs. Safe transistor operation region. Statistical approach. Temperature-dependent electrical measurements.