A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation.
A full-band Monte Carlo model has been coupled to a Schrodinger equation solver to account for the size quantization effects that occur at heterojunctions, such as the oxide interface in MOS devices. The overall model retains the features of the well-developed semi-classical approach, by treating se...
| Опубликовано в:: | IEEE Transactions on electron devices 50, 2 (2003). |
|---|---|
| Главный автор: | |
| Формат: | Статья |
| Язык: | English |
| Предметы: |