A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation.

A full-band Monte Carlo model has been coupled to a Schrodinger equation solver to account for the size quantization effects that occur at heterojunctions, such as the oxide interface in MOS devices. The overall model retains the features of the well-developed semi-classical approach, by treating se...

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Bibliographic Details
Published in:	IEEE Transactions on electron devices 50, 2 (2003).
Main Author:	Winstead, B.
Format:	Article
Language:	English
Subjects:	25 nm. MOS capacitors. MOS devices. MOSFET. Monte Carlo device simulation. Schrodinger equation solver. Double gate structures. Full-band Monte Carlo model. Heterojunctions. Nanometer-scale devices. Nonequilibrium ballistic transport. Oxide interface. Particle-based Monte Carlo. Quantum correction methodology. Size quantization effects.