Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-μm CMOS process.

Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-μm CMOS process.

The turn-on mechanism of a silicon-controlled rectifier (SCR) device is essentially a current triggering event. While a current is applied to the base or substrate of the SCR device, it can be quickly triggered into its latching state. In this paper, a novel design concept to turn on the SCR device...

詳細記述

書誌詳細
出版年:IEEE Transactions on electron devices 50, 2 (2003).
第一著者: Ming-Dou Ker
フォーマット: 論文
言語:English
主題:
0.25 micron.
20 micron.
6.5 kV.
7.8 ns.
Adjustable holding voltage.
Controllable switching voltage.
Current triggering event.
Electrostatic discharge protection.
Fully silicided CMOS process.
Latching state.
On-chip ESD protection.
Silicon-controlled rectifier device.
Substrate-triggered SCR device.
Turn-on mechanism.