Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-μm CMOS process.
The turn-on mechanism of a silicon-controlled rectifier (SCR) device is essentially a current triggering event. While a current is applied to the base or substrate of the SCR device, it can be quickly triggered into its latching state. In this paper, a novel design concept to turn on the SCR device...
| প্রকাশিত: | IEEE Transactions on electron devices 50, 2 (2003). |
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| প্রধান লেখক: | |
| বিন্যাস: | প্রবন্ধ |
| ভাষা: | English |
| বিষয়গুলি: |