Threshold voltage-related soft error degradation in a TFT SRAM cell.
This is the first report of abnormal behavior in the soft error rate (SER) dependence on supply voltage (Vcc) for a bottom-gated polysilicon PMOS thin-film transistor (TFT) static random access memory (SRAM). We found that the TFT SER does not continuously improve (as is expected and desirable) with...
| Publicado no: | IEEE Transactions on electron devices 50, 2 (2003). |
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| Autor principal: | |
| Formato: | Artigo |
| Idioma: | English |
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