Threshold voltage-related soft error degradation in a TFT SRAM cell.

This is the first report of abnormal behavior in the soft error rate (SER) dependence on supply voltage (Vcc) for a bottom-gated polysilicon PMOS thin-film transistor (TFT) static random access memory (SRAM). We found that the TFT SER does not continuously improve (as is expected and desirable) with...

Full description

Bibliographic Details
Published in:	IEEE Transactions on electron devices 50, 2 (2003).
Main Author:	Ikeda, S.
Format:	Article
Language:	English
Subjects:	5 to 2 V. NMOS SRAM driver. SER dependence. SPICE simulation. TFT SRAM. TFT SRAM cell. TFT threshold voltage. Alpha particles. Bottom-gated polysilicon PMOS TFT. Floating body. Soft error. Soft error rate dependence. Static random access memory. Supply voltage. Thin-film transistor SRAM. Threshold voltage-related soft error degradation.