Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity.
This work demonstrates that the "purity", meaning the low density of electron traps in a semi-insulating (SI) SiC substrate, can be crucial for the electrical characteristics of 4H-SiC MESFETs. Structures realized on two types of SI substrates have been investigated. The first kind is vana...
Xuất bản năm: | IEEE Transactions on electron devices 50, 2 (2003). |
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Tác giả chính: | |
Định dạng: | Bài viết |
Ngôn ngữ: | English |
Những chủ đề: |