Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity.

This work demonstrates that the "purity", meaning the low density of electron traps in a semi-insulating (SI) SiC substrate, can be crucial for the electrical characteristics of 4H-SiC MESFETs. Structures realized on two types of SI substrates have been investigated. The first kind is vana...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Τόπος έκδοσης:	IEEE Transactions on electron devices 50, 2 (2003).
Κύριος συγγραφέας:	Sghaier, N.
Μορφή:	Άρθρο
Γλώσσα:	English
Θέματα:	1.05 eV. 4H-SiC MESFETs. Id-Vds measurements. SiC. SiC:V. V doped substrates. Deep traps. Drain-source output conductance. Electrical characteristics. Frequency dispersion measurements. High temperature CVD technique. Low V content substrates. Low electron trap density. Parasitic effects. Physical vapor transport sublimation technique. Semi-insulating SiC substrate. Static output characteristics. Substrate purity dependence. Transconductance. Transistors. Trap localization. Trapping phenomenon.