Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects.
The dependence of the strain-induced on-current improvement in n-MOSFETs on scaling and the crystallographic orientation of the channel is investigated by self-consistent full-band Monte Carlo simulation. For a channel orientation along the <110> direction, the enhancement decreases weakly fro...
| Pubblicato in: | IEEE Transactions on electron devices 50, 2 (2003). |
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| Autore principale: | |
| Natura: | Articolo |
| Lingua: | inglese |
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