Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects.

Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects.

The dependence of the strain-induced on-current improvement in n-MOSFETs on scaling and the crystallographic orientation of the channel is investigated by self-consistent full-band Monte Carlo simulation. For a channel orientation along the <110> direction, the enhancement decreases weakly fro...

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Détails bibliographiques
Publié dans:IEEE Transactions on electron devices 50, 2 (2003).
Auteur principal: Bufler, F.M
Format: Article
Langue:English
Sujets:
25 to 75 nm.
Si.
Anisotropic effects.
Ballistic regime.
Channel crystallographic orientation.
Full-band Monte Carlo simulation.
High longitudinal field.
Quasi-ballistic transport.
Self-consistent Monte Carlo simulation.
Strain-induced on-current improvement.
Strained-Si n-MOSFETs.
Velocity overshoot.