An over-110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission system.
We successfully developed state-of-the-art InP high electron mobility transistor (HEMT) distributed amplifiers by using inverted microstrip line (IMSL) technology. The IMSL has minor frequency dispersion characteristics and a simple equivalent circuit model can embody its discontinuity, such as a T-...
| Vydáno v: | IEEE Journal of solid state circuits 38, 9 (2003). |
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| Hlavní autor: | |
| Médium: | Článek |
| Jazyk: | English |
| Témata: |