An over-110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission system.

An over-110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission system.

We successfully developed state-of-the-art InP high electron mobility transistor (HEMT) distributed amplifiers by using inverted microstrip line (IMSL) technology. The IMSL has minor frequency dispersion characteristics and a simple equivalent circuit model can embody its discontinuity, such as a T-...

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Bibliographic Details
Published in:IEEE Journal of solid state circuits 38, 9 (2003).
Main Author: Masuda, S.
Format: Article
Language:English
Subjects:
110 GHz.
14.5 dB.
7.5 dB.
94 GHz.
InP.
InP HEMT distributed baseband amplifier.
T-junction.
W-band.
Circuit design.
Discontinuity.
Equivalent circuit model.
Fiber-optic communication.
Flip-chip assembly.
Frequency dispersion.
Gain-bandwidth product.
Inverted microstrip line technology.
Optical transmission system.
Ultra-broad-band IC.