صورة الغلاف

An over-110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission system.

We successfully developed state-of-the-art InP high electron mobility transistor (HEMT) distributed amplifiers by using inverted microstrip line (IMSL) technology. The IMSL has minor frequency dispersion characteristics and a simple equivalent circuit model can embody its discontinuity, such as a T-...

وصف كامل

التفاصيل البيبلوغرافية
الحاوية / القاعدة:IEEE Journal of solid state circuits 38, 9 (2003).
المؤلف الرئيسي: Masuda, S.
التنسيق: مقال
اللغة:الإنجليزية
الموضوعات:
110 GHz.
14.5 dB.
7.5 dB.
94 GHz.
InP.
InP HEMT distributed baseband amplifier.
T-junction.
W-band.
Circuit design.
Discontinuity.
Equivalent circuit model.
Fiber-optic communication.
Flip-chip assembly.
Frequency dispersion.
Gain-bandwidth product.
Inverted microstrip line technology.
Optical transmission system.
Ultra-broad-band IC.