FET circuit model extraction and characterization for monolithic microwave integrated circuit design

The use of Gallium Arsenide field-effect transistors in high frequency applications has been a remarkable advancement in microwave technology. More research and development groups are now giving much attention to the design and fabrication of GaAs FETs for different RF applications. This posts a dem...

Täydet tiedot

Bibliografiset tiedot

Päätekijä:	Agustin, Rowelito D.
Muut tekijät:	Dizon, Raphael Angelo S., Sebastian, Michael James D.
Aineistotyyppi:	Opinnäyte
Kieli:	English
Julkaistu:	2008.
Aiheet:	Field-effect transistors. Integrated circuits > Design and construction. Microwave integrated circuits > Design and construction. FET circuit model extraction. Monolithic Microwave Integrated Circuits.