FET circuit model extraction and characterization for monolithic microwave integrated circuit design

The use of Gallium Arsenide field-effect transistors in high frequency applications has been a remarkable advancement in microwave technology. More research and development groups are now giving much attention to the design and fabrication of GaAs FETs for different RF applications. This posts a dem...

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Detalles Bibliográficos

Autor Principal:	Agustin, Rowelito D.
Outros autores:	Dizon, Raphael Angelo S., Sebastian, Michael James D.
Formato:	Thesis
Idioma:	English
Publicado:	2008.
Subjects:	Field-effect transistors. Integrated circuits > Design and construction. Microwave integrated circuits > Design and construction. FET circuit model extraction. Monolithic Microwave Integrated Circuits.