Arsenic flux dependence of the mobility and junction electric field of modulation-doped GaAs/AlGaAs heterostructures

Dades bibliogràfiques
Autor principal:	Patricio, Michelee G.
Format:	Thesis
Idioma:	anglès
Publicat:	2002.
Matèries:	Modulation-doped field-effect transistors. Gallium arsenside semiconductors. Molecular beam epitaxy. Semiconductor doping.