Arsenic flux dependence of the mobility and junction electric field of modulation-doped GaAs/AlGaAs heterostructures

Detalles Bibliográficos
Autor principal:	Patricio, Michelee G.
Formato:	Tesis
Lenguaje:	English
Publicado:	2002.
Materias:	Modulation-doped field-effect transistors. Gallium arsenside semiconductors. Molecular beam epitaxy. Semiconductor doping.