Arsenic flux dependence of the mobility and junction electric field of modulation-doped GaAs/AlGaAs heterostructures

Detaylı Bibliyografya
Yazar:	Patricio, Michelee G.
Materyal Türü:	Tez
Dil:	English
Baskı/Yayın Bilgisi:	2002.
Konular:	Modulation-doped field-effect transistors. Gallium arsenside semiconductors. Molecular beam epitaxy. Semiconductor doping.