Arsenic flux dependence of the mobility and junction electric field of modulation-doped GaAs/AlGaAs heterostructures

Bibliografski detalji
Glavni autor:	Patricio, Michelee G.
Format:	Disertacija
Jezik:	English
Izdano:	2002.
Teme:	Modulation-doped field-effect transistors. Gallium arsenside semiconductors. Molecular beam epitaxy. Semiconductor doping.