Arsenic flux dependence of the mobility and junction electric field of modulation-doped GaAs/AlGaAs heterostructures

Arsenic flux dependence of the mobility and junction electric field of modulation-doped GaAs/AlGaAs heterostructures

Opis bibliograficzny
1. autor: Patricio, Michelee G.
Format: Praca dyplomowa
Język:English
Wydane: 2002.
Hasła przedmiotowe:
Modulation-doped field-effect transistors.
Gallium arsenside semiconductors.
Molecular beam epitaxy.
Semiconductor doping.