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Arsenic flux dependence of the...
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Arsenic flux dependence of the mobility and junction electric field of modulation-doped GaAs/AlGaAs heterostructures
Bibliographic Details
Main Author:
Patricio, Michelee G.
Format:
Thesis
Language:
English
Published:
2002.
Subjects:
Modulation-doped field-effect transistors.
Gallium arsenside semiconductors.
Molecular beam epitaxy.
Semiconductor doping.
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