Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Bibliografiske detaljer
Hovedforfatter: Somintac, Armando S.
Format: Thesis
Sprog:English
Udgivet: 2001.
Fag:
Molecular beam epitaxy.
Optoelectronic devices.
Gallium arsenide.