Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Xehetasun bibliografikoak
Egile nagusia: Somintac, Armando S.
Formatua: Thesis
Hizkuntza:English
Argitaratua: 2001.
Gaiak:
Molecular beam epitaxy.
Optoelectronic devices.
Gallium arsenide.