Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Detaylı Bibliyografya
Yazar: Somintac, Armando S.
Materyal Türü: Tez
Dil:English
Baskı/Yayın Bilgisi: 2001.
Konular:
Molecular beam epitaxy.
Optoelectronic devices.
Gallium arsenide.