Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Bibliografiska uppgifter
Huvudupphovsman: Somintac, Armando S.
Materialtyp: Lärdomsprov
Språk:English
Publicerad: 2001.
Ämnen:
Molecular beam epitaxy.
Optoelectronic devices.
Gallium arsenide.