Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Detalhes bibliográficos
Autor principal: Somintac, Armando S.
Formato: Tese
Idioma:English
Publicado em: 2001.
Assuntos:
Molecular beam epitaxy.
Optoelectronic devices.
Gallium arsenide.