Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Bibliografische gegevens
Hoofdauteur: Somintac, Armando S.
Formaat: Thesis
Taal:English
Gepubliceerd in: 2001.
Onderwerpen:
Molecular beam epitaxy.
Optoelectronic devices.
Gallium arsenide.