Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Manylion Llyfryddiaeth
Prif Awdur: Somintac, Armando S.
Fformat: Traethawd Ymchwil
Iaith:English
Cyhoeddwyd: 2001.
Pynciau:
Molecular beam epitaxy.
Optoelectronic devices.
Gallium arsenide.