Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Podrobná bibliografie
Hlavní autor: Somintac, Armando S.
Médium: Diplomová práce
Jazyk:English
Vydáno: 2001.
Témata:
Molecular beam epitaxy.
Optoelectronic devices.
Gallium arsenide.