Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Dettagli Bibliografici
Autore principale: Somintac, Armando S.
Natura: Tesi
Lingua:English
Pubblicazione: 2001.
Soggetti:
Molecular beam epitaxy.
Optoelectronic devices.
Gallium arsenide.