Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Bibliografski detalji
Glavni autor: Somintac, Armando S.
Format: Disertacija
Jezik:English
Izdano: 2001.
Teme:
Molecular beam epitaxy.
Optoelectronic devices.
Gallium arsenide.