Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Bibliographische Detailangaben
1. Verfasser: Somintac, Armando S.
Format: Abschlussarbeit
Sprache:English
Veröffentlicht: 2001.
Schlagworte:
Molecular beam epitaxy.
Optoelectronic devices.
Gallium arsenide.