Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates

Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates

Bibliografiska uppgifter
Huvudupphovsman: Sarmiento, Raymund Lee Antonio C.
Materialtyp: Lärdomsprov
Språk:English
Publicerad: 2001.
Ämnen:
Gallium arsenide > Spectra.
Molecular beam epitaxy.
Deep level transient spectroscopy.