Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates

Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates

Bibliografische gegevens
Hoofdauteur: Sarmiento, Raymund Lee Antonio C.
Formaat: Thesis
Taal:English
Gepubliceerd in: 2001.
Onderwerpen:
Gallium arsenide > Spectra.
Molecular beam epitaxy.
Deep level transient spectroscopy.