Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates

Detalles Bibliográficos
Autor Principal:	Sarmiento, Raymund Lee Antonio C.
Formato:	Thesis
Idioma:	inglés
Publicado:	2001.
Subjects:	Gallium arsenide > Spectra. Molecular beam epitaxy. Deep level transient spectroscopy.