Mathematical modeling of implant dose and characterization of P-N junctions formed by ion shower technology (IST)

Manylion Llyfryddiaeth
Prif Awdur:	Madrid, Pepe L.
Fformat:	Traethawd Ymchwil
Iaith:	Saesneg
Cyhoeddwyd:	2000.
Pynciau:	Ion implantation > Mathematical models. Semiconductor doping > Mathematical models. Semiconductors > Characterization.